IR2111 High- and Low-Side Gate Driver IC for MOSFET/IGBT, 600 V
Prices updated: 13 Oct 2026
Compare prices
| Store | product | Price | View in store |
|---|---|---|---|
 Makers ElectronicsCheapest | IR2111 High-Low Side Gate Driver for Power MOSFETs / IGBTs | 90 EGP | View in store |
 RAM Electronics | IR2111 | 145 EGP | View in store |
Price history
Lowest daily price, last 90 days
Lowest price recorded: 90 EGP
About this product
The IR2111 is a high-voltage, high-speed gate driver for MOSFET and IGBT half-bridge circuits, with independent high-side and low-side outputs. It tolerates up to 600 V offset and includes undervoltage lockout on both channels. Its typical 650 ns internal deadtime helps prevent shoot-through. Common in inverters, motor drives and switch-mode power stages.
Specifications
- Circuit type
- High- and low-side gate driver (half-bridge)
- Offset voltage
- 600 V max
- Deadtime
- 650 ns typical
- Gate drive supply
- 10 V to 20 V
- Inputs
- CMOS Schmitt-triggered, with pull-down
- Protection
- Undervoltage lockout on both channels
Frequently asked questions
What is the price of IR2111 High- and Low-Side Gate Driver IC for MOSFET/IGBT, 600 V in Egypt?
IR2111 High- and Low-Side Gate Driver IC for MOSFET/IGBT, 600 V currently costs between 90 and 145 EGP across 2 offers in Egypt.
Where can I buy IR2111 High- and Low-Side Gate Driver IC for MOSFET/IGBT, 600 V in Egypt?
IR2111 High- and Low-Side Gate Driver IC for MOSFET/IGBT, 600 V is available from Makers Electronics and RAM Electronics. Compare the offers above to find the best price.
What is the deadtime used for?
In a half-bridge, the deadtime keeps the high-side and low-side switches from conducting at the same time. The IR2111 provides a typical internal deadtime of 650 ns; check the datasheet for exact timing.
What supply voltage does the gate driver need?
The gate drive supply range is 10 V to 20 V. For the high-side channel, a bootstrap circuit is commonly used; consult the datasheet application notes for bootstrap component values.
