ElectronicsEgypt
HYB41256-12 256K x 1-Bit NMOS DRAM IC Page Mode DIP-16

HYB41256-12 256K x 1-Bit NMOS DRAM IC Page Mode DIP-16

Part number: HYB41256-12Brand: SiemensIntegrated Circuits (ICs)

Lowest price now

75 EGP

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Prices updated: 13 Oct 2026

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Price history

Lowest daily price, last 90 days

76.137573.8812 Oct 202613 Oct 2026

Lowest price recorded: 75 EGP

About this product

HYB41256-12 is a 256K x 1-bit NMOS dynamic RAM (DRAM) in a 16-pin DIP package, designed for 5 V systems. It supports page mode, which speeds up sequential reads and writes within the same row. It is used in older microcomputers, terminals and retro computer repair and restoration projects.

Specifications

Organization
256K x 1 bit
Technology
NMOS DRAM
Operating mode
Page mode
Supply voltage
5 V
Access time
120 ns (-12 speed grade)
Package
DIP-16

Frequently asked questions

What is the price of HYB41256-12 256K x 1-Bit NMOS DRAM IC Page Mode DIP-16 in Egypt?

HYB41256-12 256K x 1-Bit NMOS DRAM IC Page Mode DIP-16 currently costs 75 EGP in Egypt.

Where can I buy HYB41256-12 256K x 1-Bit NMOS DRAM IC Page Mode DIP-16 in Egypt?

HYB41256-12 256K x 1-Bit NMOS DRAM IC Page Mode DIP-16 is available from Makers Electronics. Compare the offers above to find the best price.

Can I connect this DRAM directly to an Arduino or ESP32?

No. DRAM needs a multiplexed row/column address bus, RAS and CAS strobes, write enable, and periodic refresh cycles that must come from a memory controller or dedicated refresh circuit. It is a 5 V part, so it is not a simple plug-in for 3.3 V microcontrollers.

What supply voltage does it require?

The HYB41256-12 is specified for a 5 V supply. Use a regulated 5 V rail and keep the supply decoupled close to the package pins.