G80N60UFD 600V 80A N-Channel IGBT with Fast Recovery Diode (Co-Pak)
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Prices updated: 14 Oct 2026
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About this product
The G80N60UFD is a 600 V, 80 A N-channel IGBT with an integrated fast recovery diode in a co-pack configuration. It is designed for low switching and conduction losses, which suits motor control, inverter and power switching circuits. Confirm gate drive and thermal requirements in the datasheet before use.
Specifications
- Type
- N-channel IGBT
- Voltage rating
- 600 V
- Current rating
- 80 A
- Integrated diode
- Fast recovery diode (co-pak)
- Typical applications
- Motor control, inverters
Frequently asked questions
Can a microcontroller pin drive it directly?
No. An IGBT needs a gate driver circuit that provides the correct gate voltage and current. Check the datasheet for the recommended gate drive and add a gate resistor as specified.
Does it need a heatsink?
At high current it dissipates significant heat, so a heatsink is required. Check the datasheet for thermal resistance and maximum junction temperature when sizing the heatsink.
