G30N60C3D 600V 63A IGBT with Anti-Parallel Hyperfast Diode
Prices updated: 13 Oct 2026
Compare prices
| Store | product | Price | View in store |
|---|---|---|---|
 RAM Electronics | G30N60C3D | 55 EGP | View in store |
Price history
Lowest daily price, last 90 days
Lowest price recorded: 55 EGP
About this product
The G30N60C3D is a 600 V, 63 A insulated-gate bipolar transistor with an integrated anti-parallel hyperfast diode. It is intended for switching high-power loads such as inverters, induction heating and motor drives. The built-in diode carries freewheeling current during switching, reducing external component count.
Specifications
- Collector-emitter voltage
- 600 V
- Collector current
- 63 A
- Device type
- IGBT with anti-parallel hyperfast diode
Frequently asked questions
What is the price of G30N60C3D 600V 63A IGBT with Anti-Parallel Hyperfast Diode in Egypt?
G30N60C3D 600V 63A IGBT with Anti-Parallel Hyperfast Diode currently costs 55 EGP in Egypt.
Where can I buy G30N60C3D 600V 63A IGBT with Anti-Parallel Hyperfast Diode in Egypt?
G30N60C3D 600V 63A IGBT with Anti-Parallel Hyperfast Diode is available from RAM Electronics. Compare the offers above to find the best price.
Can I drive it directly from an Arduino or ESP32 pin?
No. The gate needs a gate driver that supplies the voltage and peak current given in the datasheet. Logic pins cannot provide that, so use a dedicated driver stage.
Is it suitable for high-frequency PWM?
IGBTs suit high-voltage, high-current switching at moderate frequencies. For high-frequency, lower-voltage switching a MOSFET is usually the better choice.
