G40N60UFD IGBT 600V 40A 160W TO-3P with Ultrafast Diode
Prices updated: 14 Oct 2026
Compare prices
| Store | product | Price | View in store |
|---|---|---|---|
 MicroohmCheapest | G40N60UFD IGBT Transistor – 600V 40A IGBT with Ultra-Fast Diode | 70 EGP90 | View in store |
 Makers Electronics | G40N60UFD IGBT Transistor 600V 40A 160W TO-3P | 90 EGP | View in store |
Price history
Lowest daily price, last 90 days
Lowest price recorded: 70 EGP
About this product
The G40N60UFD is a 600V, 40A IGBT transistor with an ultrafast co-packaged diode, rated for 160W in a TO-3P through-hole package. It is used in high-voltage switching stages such as inverters, motor drives and induction heating, where fast switching and heat dissipation matter.
Specifications
- Collector-emitter voltage
- 600 V
- Collector current
- 40 A
- Power dissipation
- 160 W
- Package
- TO-3P through-hole
- Built-in diode
- Ultrafast diode
Frequently asked questions
What is the price of G40N60UFD IGBT 600V 40A 160W TO-3P with Ultrafast Diode in Egypt?
G40N60UFD IGBT 600V 40A 160W TO-3P with Ultrafast Diode currently costs between 70 and 90 EGP across 2 offers in Egypt.
Where can I buy G40N60UFD IGBT 600V 40A 160W TO-3P with Ultrafast Diode in Egypt?
G40N60UFD IGBT 600V 40A 160W TO-3P with Ultrafast Diode is available from Microohm and Makers Electronics. Compare the offers above to find the best price.
Can I drive this IGBT directly from a microcontroller pin?
It is not recommended. An IGBT is voltage-driven and needs a suitable gate voltage and gate resistor, usually through a dedicated gate driver. Check the gate voltage and switching specifications in the datasheet.
Does it need a heatsink?
At high current and power levels, a heatsink is required. The metal tab of TO-3P IGBTs is usually connected to the collector, so use an insulating washer and kit when mounting on a grounded heatsink. Confirm the pinout in the datasheet.
