ElectronicsEgypt
BD139 NPN Power Transistor 1.5A 80V TO-126

BD139 NPN Power Transistor 1.5A 80V TO-126

Part number: BD139Transistors & MOSFETs

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6.84 EGP

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Prices updated: 12 Oct 2026

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About this product

The BD139 is a medium-power NPN bipolar transistor in a TO-126 plastic package, used for switching and amplification in audio stages, driver circuits and general power electronics. It handles up to 1.5 A continuous collector current and 80 V collector-emitter voltage, with a DC current gain (hFE) of 40 to 160.

Specifications

Transistor type
NPN
Continuous collector current (IC)
1.5 A
Collector-emitter voltage (VCEO)
80 V
Collector-base voltage (VCBO)
80 V
Emitter-base voltage (VEBO)
5 V
DC current gain (hFE)
40 to 160
Package
TO-126
Pinout
1 Emitter, 2 Collector, 3 Base

Frequently asked questions

What is the price of BD139 NPN Power Transistor 1.5A 80V TO-126 in Egypt?

BD139 NPN Power Transistor 1.5A 80V TO-126 currently costs 6.84 EGP in Egypt.

Where can I buy BD139 NPN Power Transistor 1.5A 80V TO-126 in Egypt?

BD139 NPN Power Transistor 1.5A 80V TO-126 is available from UGE. Compare the offers above to find the best price.

How do I wire the BD139 pins?

Pin 1 is the Emitter, pin 2 is the Collector and pin 3 is the Base. The emitter is normally connected to ground for a low-side switch, the collector to the load, and the base is driven through a series resistor.

How much base current does it need to switch a load from a microcontroller?

As a rough rule, the base current should be at least the collector current divided by the minimum hFE of 40. For a 1 A load, that is about 25 mA of base current. Use a base resistor sized to deliver that current from the microcontroller pin without exceeding its output limits.