YGW40N120T3 IGBT Power Transistor 1200V 40A TO-247
Prices updated: 14 Oct 2026
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| Store | product | Price | View in store |
|---|---|---|---|
 Makers Electronics | YGW40N120T3 IGBT Power Transistor 1200V 40A TO-247 | 75 EGP | View in store |
Price history
Lowest daily price, last 90 days
Lowest price recorded: 75 EGP
About this product
The YGW40N120T3 is a 1200V, 40A trench field-stop IGBT in a TO-247 package, with low VCE(sat), 10 µs short-circuit withstand time and an integrated fast recovery diode. It is designed for converter stages that need high voltage blocking and fault tolerance.
Specifications
- Collector-emitter voltage (VCES)
- 1200 V
- Collector current
- 40 A
- Short-circuit withstand time
- 10 µs
- Integrated diode
- Fast recovery diode
- Package
- TO-247
Frequently asked questions
What is the price of YGW40N120T3 IGBT Power Transistor 1200V 40A TO-247 in Egypt?
YGW40N120T3 IGBT Power Transistor 1200V 40A TO-247 currently costs 75 EGP in Egypt.
Where can I buy YGW40N120T3 IGBT Power Transistor 1200V 40A TO-247 in Egypt?
YGW40N120T3 IGBT Power Transistor 1200V 40A TO-247 is available from Makers Electronics. Compare the offers above to find the best price.
What does the 10 µs short-circuit withstand time mean in practice?
The IGBT can tolerate a short circuit for up to 10 µs. Your protection circuit must detect the fault and turn the device off within that time window.
How should I drive the YGW40N120T3?
Use a gate driver designed for IGBTs and set the gate voltage and gate resistor according to the datasheet. An isolated driver is recommended when the device is used in a high-side or bridge configuration.
