IRFBE30 N-Channel Power MOSFET 800V 4.1A TO-220
Prices updated: 13 Oct 2026
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| Store | product | Price | View in store |
|---|---|---|---|
 Makers Electronics | IRFBE30 N-Channel Power MOSFET Transistor 800V 4.1A TO-220 | 45 EGP | View in store |
Price history
Lowest daily price, last 90 days
Lowest price recorded: 45 EGP
About this product
IRFBE30 is an N-channel power MOSFET rated 800 V and 4.1 A in a TO-220 package. It is a high-voltage switching device used in switched-mode power supplies, motor drives and industrial power circuits.
Specifications
- Type
- N-channel power MOSFET
- Drain-source voltage (VDS)
- 800 V
- Drain current (ID)
- 4.1 A
- On-resistance (RDS(on))
- 3.0 Ω max (at VGS = 10 V)
- Gate-source voltage (VGS)
- ±20 V
- Package
- TO-220
Frequently asked questions
What is the price of IRFBE30 N-Channel Power MOSFET 800V 4.1A TO-220 in Egypt?
IRFBE30 N-Channel Power MOSFET 800V 4.1A TO-220 currently costs 45 EGP in Egypt.
Where can I buy IRFBE30 N-Channel Power MOSFET 800V 4.1A TO-220 in Egypt?
IRFBE30 N-Channel Power MOSFET 800V 4.1A TO-220 is available from Makers Electronics. Compare the offers above to find the best price.
What gate voltage do I need to switch it on fully?
The datasheet characterizes on-resistance at VGS = 10 V, so drive the gate at about 10 V for full enhancement. Do not exceed ±20 V on the gate.
Does it need a heatsink?
At significant power dissipation, yes. Mount it on a heatsink and keep the device within the temperature and power limits in the datasheet.
