ElectronicsEgypt
IRFB4110PBF N-Channel Power MOSFET 100V 180A TO-220

IRFB4110PBF N-Channel Power MOSFET 100V 180A TO-220

Part number: IRFB4110PBFBrand: InfineonTransistors & MOSFETs

Lowest price now

65 EGP

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Prices updated: 13 Oct 2026

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Price history

Lowest daily price, last 90 days

65.986564.0312 Oct 202613 Oct 2026

Lowest price recorded: 65 EGP

About this product

N-channel power MOSFET in a TO-220AB package, rated at 100 V drain-source with a maximum on-resistance of about 4.5 mΩ at 10 V gate drive. It is used as a switch in motor drivers, DC-DC converters, inverters and high-current load control. Mount it on a heatsink for sustained high-current operation.

Specifications

Channel type
N-channel
Drain-source voltage (VDS max)
100 V
On-resistance (RDS(on) max)
4.5 mΩ at VGS = 10 V
Continuous drain current
180 A
Package
TO-220AB

Frequently asked questions

What is the price of IRFB4110PBF N-Channel Power MOSFET 100V 180A TO-220 in Egypt?

IRFB4110PBF N-Channel Power MOSFET 100V 180A TO-220 currently costs 65 EGP in Egypt.

Where can I buy IRFB4110PBF N-Channel Power MOSFET 100V 180A TO-220 in Egypt?

IRFB4110PBF N-Channel Power MOSFET 100V 180A TO-220 is available from Makers Electronics. Compare the offers above to find the best price.

Can it be driven directly from a 3.3 V or 5 V microcontroller pin?

Not reliably. The listed on-resistance requires about 10 V on the gate, so use a gate driver or a suitable level shifter.

Does it need a heatsink?

For sustained high current, yes. The TO-220 package needs a heatsink to keep the junction temperature within the limits in the datasheet.