IRF5210 P-Channel Power MOSFET 100V 40A 60mΩ TO-220AB
Prices updated: 14 Oct 2026
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| Store | product | Price | View in store |
|---|---|---|---|
 Makers Electronics | IRF5210 P-Channel Power MOSFET Transistor 100V 40A 60mΩ TO-220 | 35 EGP | View in store |
Price history
Lowest daily price, last 90 days
Lowest price recorded: 35 EGP
About this product
The IRF5210 is a high-power P-channel MOSFET in a TO-220AB package, rated for 100V and 40A with a maximum on-resistance of 60mΩ. It is used as a high-side switch and in efficient switching circuits for power switching, load control and motor drives.
Specifications
- Channel type
- P-channel
- Drain-source voltage (VDS)
- 100 V
- Continuous drain current (ID)
- 40 A
- RDS(on) maximum
- 60 mΩ
- Maximum junction temperature
- 175 °C
- Package
- TO-220AB
Frequently asked questions
What is the price of IRF5210 P-Channel Power MOSFET 100V 40A 60mΩ TO-220AB in Egypt?
IRF5210 P-Channel Power MOSFET 100V 40A 60mΩ TO-220AB currently costs 35 EGP in Egypt.
Where can I buy IRF5210 P-Channel Power MOSFET 100V 40A 60mΩ TO-220AB in Egypt?
IRF5210 P-Channel Power MOSFET 100V 40A 60mΩ TO-220AB is available from Makers Electronics. Compare the offers above to find the best price.
How do I drive the IRF5210 from a 5V microcontroller?
Because it is a P-channel high-side switch, the gate must be pulled about 10V below the source to fully turn it on. A 5V logic pin is not enough, so use an NPN transistor or level-shifter stage that pulls the gate toward ground, with a pull-up resistor to the source rail.
Does it need a heatsink?
At significant current, yes. The power dissipated in the MOSFET is roughly I² × RDS(on), so a heatsink is recommended when the load draws a large current continuously.
