ElectronicsEgypt
IRF3415 N-Channel HEXFET Power MOSFET 150V 43A TO-220

IRF3415 N-Channel HEXFET Power MOSFET 150V 43A TO-220

Part number: IRF3415Brand: International RectifierTransistors & MOSFETs

Lowest price now

33 EGP

1 offer · 1 stores

View in store: Circuits Electronics

Prices updated: 14 Oct 2026

Compare prices

StorePriceView in store
Circuits Electronics logoCircuits Electronics33 EGPView in store

Price history

Lowest daily price, last 90 days

33.53332.5113 Oct 202614 Oct 2026

Lowest price recorded: 33 EGP

About this product

The IRF3415 is an N-channel HEXFET power MOSFET in a TO-220 package, rated at 150 V and 43 A. It suits high-current switching in power supplies, inverters, motor drives and DC load switching, where its low on-resistance helps limit conduction losses.

Specifications

Channel type
N-channel HEXFET
Drain-source voltage
150 V
Drain current
43 A
On-resistance RDS(on)
0.042 Ω max at VGS = 10 V
Package
TO-220AB
Mounting
Through-hole

Frequently asked questions

What is the price of IRF3415 N-Channel HEXFET Power MOSFET 150V 43A TO-220 in Egypt?

IRF3415 N-Channel HEXFET Power MOSFET 150V 43A TO-220 currently costs 33 EGP in Egypt.

Where can I buy IRF3415 N-Channel HEXFET Power MOSFET 150V 43A TO-220 in Egypt?

IRF3415 N-Channel HEXFET Power MOSFET 150V 43A TO-220 is available from Circuits Electronics. Compare the offers above to find the best price.

What gate voltage should I use to switch the IRF3415 fully on?

The on-resistance is specified at 10 V gate-source voltage, so a gate drive of about 10 V to 12 V is recommended. It is not a logic-level device, so a gate driver stage is needed when switching from a 3.3 V or 5 V controller.

Does the IRF3415 need a heatsink?

At high currents the conduction losses produce significant heat. Estimate the dissipation using the on-resistance and the load current, and use a heatsink with thermal compound when the estimated losses are high for your enclosure and airflow.