FQPF6N90 900V 3.4A N-Channel Power MOSFET (TO-220F)
Prices updated: 14 Oct 2026
Compare prices
| Store | product | Price | View in store |
|---|---|---|---|
 Microohm | FQPF6N90 High-Voltage N-Channel Power MOSFET (Enhancement Mode) – TO-220F | 20 EGP30 | View in store |
Price history
Lowest daily price, last 90 days
Lowest price recorded: 20 EGP
About this product
FQPF6N90 is a 900 V, 3.4 A enhancement-mode N-channel power MOSFET in a TO-220F package, rated for 56 W dissipation. With a gate charge of 40 nC and an 80 ns rise time, it suits high-voltage switching designs that need extra voltage margin.
Specifications
- Mode
- Enhancement-mode N-Channel
- Drain-source voltage
- 900 V
- Continuous drain current
- 3.4 A
- Power dissipation
- 56 W
- Total gate charge (Qg)
- 40 nC
- Rise time (tr)
- 80 ns
- Package
- TO-220F
Frequently asked questions
What is the price of FQPF6N90 900V 3.4A N-Channel Power MOSFET (TO-220F) in Egypt?
FQPF6N90 900V 3.4A N-Channel Power MOSFET (TO-220F) currently costs 20 EGP in Egypt.
Where can I buy FQPF6N90 900V 3.4A N-Channel Power MOSFET (TO-220F) in Egypt?
FQPF6N90 900V 3.4A N-Channel Power MOSFET (TO-220F) is available from Microohm. Compare the offers above to find the best price.
Why choose a 900 V part over a 600 V part?
A 900 V rating gives more voltage margin for higher bus voltages or voltage spikes. It does not automatically mean lower on-resistance, so compare RDS(on) in the datasheet for your design.
Is the TO-220F tab insulated?
Yes. TO-220F is a fully isolated package, so it can be mounted on a heatsink without an insulating washer, which simplifies the thermal layout.
