FQPF4N60 600V 2.6A N-Channel Power MOSFET, TO-220F
Prices updated: 14 Oct 2026
Compare prices
| Store | product | Price | View in store |
|---|---|---|---|
 Microohm | FQPF4N60 600V N-Channel Power MOSFET (Enhancement Mode) – TO-220F | 20 EGP30 | View in store |
Price history
Lowest daily price, last 90 days
Lowest price recorded: 20 EGP
About this product
FQPF4N60 is a 600 V N-channel enhancement-mode power MOSFET in an insulated TO-220F package, rated at 2.6 A and 36 W. Its low gate charge and fast switching make it suitable for switch-mode power supplies, inverters and motor or lamp drive circuits.
Specifications
- Type
- N-channel enhancement mode power MOSFET
- Drain-source voltage (VDSS)
- 600 V
- Continuous drain current
- 2.6 A
- Power dissipation
- 36 W
- Package
- TO-220F (insulated)
- Total gate charge
- 15 nC
- Rise time
- 45 ns
- Output capacitance (Coss)
- 70 pF
Frequently asked questions
What is the price of FQPF4N60 600V 2.6A N-Channel Power MOSFET, TO-220F in Egypt?
FQPF4N60 600V 2.6A N-Channel Power MOSFET, TO-220F currently costs 20 EGP in Egypt.
Where can I buy FQPF4N60 600V 2.6A N-Channel Power MOSFET, TO-220F in Egypt?
FQPF4N60 600V 2.6A N-Channel Power MOSFET, TO-220F is available from Microohm. Compare the offers above to find the best price.
Do I need an insulating washer when mounting it on a heatsink?
No. The TO-220F package has an insulated tab, so it can be mounted directly on a heatsink without an insulating washer, though the heatsink should still be checked for electrical isolation requirements of your design.
What is the pin order for the TO-220F package?
Pins are gate, drain and source in standard TO-220 order. Verify the pinout on the datasheet before wiring, as orientation depends on how the part is viewed.
