FQP13N80 N-Channel Power MOSFET 800V 12.6A TO-220
Prices updated: 14 Oct 2026
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| Store | product | Price | View in store |
|---|---|---|---|
 Makers Electronics | FQP13N80 N-Channel Power MOSFET 800V 12.6A TO-220 | 25 EGP | View in store |
Price history
Lowest daily price, last 90 days
Lowest price recorded: 25 EGP
About this product
FQP13N80 is an 800V, 12.6A N-channel power MOSFET in a TO-220 package. It offers fast switching, low on-resistance and is 100% avalanche tested. It is intended for switch-mode power supplies, active power factor correction and lamp ballast circuits.
Specifications
- Channel type
- N-channel
- Drain-source voltage (VDSS)
- 800 V
- Continuous drain current (ID)
- 12.6 A
- RDS(on) max
- 0.75 Ω at VGS = 10 V (datasheet)
- Package
- TO-220
- Applications
- SMPS, active PFC, lamp ballasts
- Avalanche rating
- 100% avalanche tested
Frequently asked questions
What is the price of FQP13N80 N-Channel Power MOSFET 800V 12.6A TO-220 in Egypt?
FQP13N80 N-Channel Power MOSFET 800V 12.6A TO-220 currently costs 25 EGP in Egypt.
Where can I buy FQP13N80 N-Channel Power MOSFET 800V 12.6A TO-220 in Egypt?
FQP13N80 N-Channel Power MOSFET 800V 12.6A TO-220 is available from Makers Electronics. Compare the offers above to find the best price.
Is the FQP13N80 suitable for SMPS and PFC circuits?
The listing targets SMPS, active PFC and lamp ballasts. Check gate drive, switching losses and heatsinking against your design, and refer to the datasheet for the exact test conditions.
What gate voltage should I use?
The on-resistance is specified at VGS = 10 V in the datasheet, so drive the gate at about 10 V to reach the rated RDS(on). Never exceed the absolute maximum gate-source rating.
