FGA25N120ANTD 1200V 25A NPT IGBT TO-3P
Prices updated: 14 Oct 2026
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| Store | product | Price | View in store |
|---|---|---|---|
 Makers Electronics | FGA25N120ANTD NPT IGBT Transistor 1200V 25A TO-3P | 80 EGP | View in store |
Price history
Lowest daily price, last 90 days
Lowest price recorded: 80 EGP
About this product
FGA25N120ANTD is a 1200 V, 25 A non-punch-through (NPT) IGBT in a TO-3P package with an anti-parallel diode. It is designed for high-voltage switching in applications such as induction heating, motor drives and power converters.
Specifications
- Device type
- IGBT (NPT)
- Collector-emitter voltage (VCES)
- 1200 V
- Collector current (IC)
- 25 A
- Anti-parallel diode
- Yes
- Package
- TO-3P
Frequently asked questions
What is the price of FGA25N120ANTD 1200V 25A NPT IGBT TO-3P in Egypt?
FGA25N120ANTD 1200V 25A NPT IGBT TO-3P currently costs 80 EGP in Egypt.
Where can I buy FGA25N120ANTD 1200V 25A NPT IGBT TO-3P in Egypt?
FGA25N120ANTD 1200V 25A NPT IGBT TO-3P is available from Makers Electronics. Compare the offers above to find the best price.
How should the gate of an IGBT be driven?
Use a dedicated gate driver that supplies the gate voltage and peak current specified in the datasheet. IGBT gates have significant capacitance, so a weak drive will slow switching and increase losses.
Can it replace a MOSFET in a high-voltage circuit?
Not automatically. IGBTs suit high voltage and high current at moderate switching frequencies, while MOSFETs are usually preferred at higher frequencies. Check the switching losses and gate drive requirements before substituting.
