ElectronicsEgypt
5N120BND N-Channel IGBT Transistor 1200V 21A TO-220

5N120BND N-Channel IGBT Transistor 1200V 21A TO-220

Part number: 5N120BNDTransistors & MOSFETs

Lowest price now

60 EGP

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Prices updated: 14 Oct 2026

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Price history

Lowest daily price, last 90 days

60.96059.112 Oct 202614 Oct 2026

Lowest price recorded: 60 EGP

About this product

The 5N120BND is an N-channel IGBT (insulated-gate bipolar transistor) rated at 1200 V and 21 A in a TO-220 package. IGBTs combine an easy-to-drive MOS-style gate with bipolar output and are commonly used as power switches in inverters, motor drives and induction heating circuits. Confirm gate drive and thermal requirements in the datasheet before use.

Specifications

Type
N-channel IGBT / IGBT قناة N
Voltage rating
1200 V / 1200 فولت
Current rating
21 A / 21 أمبير
Package
TO-220

Frequently asked questions

What is the price of 5N120BND N-Channel IGBT Transistor 1200V 21A TO-220 in Egypt?

5N120BND N-Channel IGBT Transistor 1200V 21A TO-220 currently costs 60 EGP in Egypt.

Where can I buy 5N120BND N-Channel IGBT Transistor 1200V 21A TO-220 in Egypt?

5N120BND N-Channel IGBT Transistor 1200V 21A TO-220 is available from Makers Electronics. Compare the offers above to find the best price.

What kind of circuits is this IGBT suited for?

It suits high-voltage power switching such as inverters, motor drives and induction heating, where a 1200 V blocking rating and 21 A current rating are needed. Check the datasheet for switching frequency limits.

Can I drive this IGBT directly from a microcontroller pin?

Usually not. An IGBT needs a gate driver circuit that supplies enough gate voltage and current to switch it on and off properly, which a microcontroller GPIO pin normally cannot provide. Verify the recommended gate voltage in the datasheet.