3DU5C NPN Metal Silicon Phototransistor 880nm 10V
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Prices updated: 14 Oct 2026
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About this product
Metal-encapsulated NPN silicon phototransistor that conducts when light strikes its base window, producing an electrical output from the emitter or collector. Its peak wavelength is 880nm in the infrared range, making it suitable for light detection and infrared sensing circuits. Rated for a maximum working voltage of 10V with a photocurrent of 0.5 to 1mA according to the listing.
Specifications
- Type
- NPN silicon phototransistor, metal case
- Peak wavelength
- 880 nm
- Max working voltage
- 10 V
- Reverse breakdown voltage
- 15 V
- Photocurrent
- 0.5 to 1 mA
- Dark current
- 0.3 µA
- Power consumption
- 30 mW
- Body size
- 7 x 5 mm, total length 28 mm
Frequently asked questions
How do I use it in a circuit?
It is typically used as a light-controlled switch or sensor, with a load or pull-up resistor on the emitter or collector side. The output voltage depends on light intensity and the load you choose, so test the circuit with your light source.
Does it respond best to visible light or infrared?
Its peak wavelength is 880nm, which is in the infrared range, so it responds best to infrared light. It pairs well with an 880nm-class infrared LED.
