Toshiba MG200Q2YS40 IGBT Module 200A 1200V Half-Bridge
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Prices updated: 13 Oct 2026
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About this product
The Toshiba MG200Q2YS40 is a 1200 V, 200 A IGBT module that contains a complete half bridge in one package, with electrodes isolated from the case. It is intended for high power switching and motor control, with fast switching times (tf and trr up to 0.5 µs) and a maximum VCE(sat) of 4.0 V.
Specifications
- Collector-emitter voltage (VCES)
- 1200 V
- DC collector current (Ic)
- 200 A
- Peak collector current (Icp)
- 400 A
- Gate-emitter voltage (VGES)
- ±20 V
- Saturation voltage VCE(sat)
- 4.0 V max
- Switching time tf
- 0.5 µs max
- Configuration
- Half bridge (2 in 1)
- Weight
- 430 g
Frequently asked questions
Does this module need a gate driver?
Yes, an IGBT module needs a suitable gate driver circuit to switch it safely, and the gate-emitter voltage must stay within ±20 V.
How is the half bridge arranged inside the module?
The module contains a complete half bridge in one package, so it can be used directly as one leg of an inverter or motor driver bridge. The electrodes are isolated from the case.
