Toshiba K2611 N-Channel MOSFET 900V 9A TO-3PN
Prices updated: 13 Oct 2026
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| Store | product | Price | View in store |
|---|---|---|---|
 Makers Electronics | Toshiba K2611 N-Channel MOSFET Transistor 900V 9A TO-3PN | 40 EGP | View in store |
Price history
Lowest daily price, last 90 days
Lowest price recorded: 40 EGP
About this product
The Toshiba K2611 is a high-voltage N-channel power MOSFET rated at 900V and 9A in a TO-3PN package. It suits switching stages in power supplies, inverters and motor drivers that need a high drain-source voltage rating. A heatsink is recommended when it dissipates significant power.
Specifications
- Channel type
- N-channel
- Drain-source voltage (VDSS)
- 900V
- Drain current (ID)
- 9A
- Package
- TO-3PN
- Type
- Power MOSFET
Frequently asked questions
What is the price of Toshiba K2611 N-Channel MOSFET 900V 9A TO-3PN in Egypt?
Toshiba K2611 N-Channel MOSFET 900V 9A TO-3PN currently costs 40 EGP in Egypt.
Where can I buy Toshiba K2611 N-Channel MOSFET 900V 9A TO-3PN in Egypt?
Toshiba K2611 N-Channel MOSFET 900V 9A TO-3PN is available from Makers Electronics. Compare the offers above to find the best price.
Can the K2611 be driven directly from a microcontroller pin?
Not usually. It is a high-voltage power MOSFET, so use a gate driver or a suitable driver stage, and check the gate threshold and required gate voltage in the datasheet.
What protection does it need when switching inductive loads?
Inductive loads such as relays or motors need a flyback (freewheeling) diode across the load to absorb the voltage spike when the MOSFET turns off.
