ElectronicsEgypt
NCE NCE30D2519K 30V 25A N+P Channel MOSFET TO-252-4

NCE NCE30D2519K 30V 25A N+P Channel MOSFET TO-252-4

Part number: NCE30D2519KBrand: NCE (Wuxi NCE Power Semiconductor)Transistors & MOSFETs

Lowest price now

24 EGP

1 offer · 1 stores

View in store: Makers Electronics

Prices updated: 13 Oct 2026

Compare prices

StorePriceView in store
Makers Electronics logoMakers Electronics24 EGPView in store

Price history

Lowest daily price, last 90 days

24.362423.6412 Oct 202613 Oct 2026

Lowest price recorded: 24 EGP

About this product

NCE30D2519K is an SMD MOSFET pair in a TO-252-4 (DPAK) package with one N-channel and one P-channel device, rated 30V and 25A. Its RDS(on) of 8.5mΩ at 10V gate drive makes it suitable for complementary switching, load switches and power stages in DC-DC or motor driver circuits.

Specifications

Drain-source voltage (Vdss)
30V
Continuous drain current (Id)
25A
RDS(on) at Vgs, Id
8.5mΩ @ 10V, 7A
Gate threshold voltage (Vgs(th))
2V @ 250µA
Power dissipation (Pd)
21W
Channel configuration
1 N-channel + 1 P-channel
Package
TO-252-4 (DPAK)
Operating junction temperature
-55℃ to +175℃

Frequently asked questions

What is the price of NCE NCE30D2519K 30V 25A N+P Channel MOSFET TO-252-4 in Egypt?

NCE NCE30D2519K 30V 25A N+P Channel MOSFET TO-252-4 currently costs 24 EGP in Egypt.

Where can I buy NCE NCE30D2519K 30V 25A N+P Channel MOSFET TO-252-4 in Egypt?

NCE NCE30D2519K 30V 25A N+P Channel MOSFET TO-252-4 is available from Makers Electronics. Compare the offers above to find the best price.

Can a 3.3V microcontroller pin drive this MOSFET fully on?

The RDS(on) is specified at 10V gate drive. At 3.3V or 5V logic levels the MOSFET may not fully enhance, so check the Vgs versus RDS(on) curves in the NCE datasheet or use a gate driver.

How are the N and P devices wired inside the package?

The TO-252-4 package holds two devices with their own gate, drain and source connections. Confirm the pinout in the NCE datasheet before wiring, since the N and P sides are connected differently in complementary circuits.