ElectronicsEgypt
IRFPF50 HEXFET Power MOSFET 900V 6.7A TO-247AC

IRFPF50 HEXFET Power MOSFET 900V 6.7A TO-247AC

Part number: IRFPF50Brand: International RectifierTransistors & MOSFETs

Lowest price now

35 EGP

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Prices updated: 13 Oct 2026

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Price history

Lowest daily price, last 90 days

35.533534.4812 Oct 202613 Oct 2026

Lowest price recorded: 35 EGP

About this product

The IRFPF50 is an N-channel HEXFET power MOSFET rated at 900V and 6.7A in a TO-247AC package. It is used for switching in power supplies, inverters and industrial control circuits that need a high drain-source voltage. It offers fast switching and a rugged design for commercial and industrial use.

Specifications

Polarity
N-channel
Drain-source voltage
900V
Continuous drain current
6.7A
On-resistance
1.6Ω max (at VGS = 10V)
Package
TO-247AC

Frequently asked questions

What is the price of IRFPF50 HEXFET Power MOSFET 900V 6.7A TO-247AC in Egypt?

IRFPF50 HEXFET Power MOSFET 900V 6.7A TO-247AC currently costs 35 EGP in Egypt.

Where can I buy IRFPF50 HEXFET Power MOSFET 900V 6.7A TO-247AC in Egypt?

IRFPF50 HEXFET Power MOSFET 900V 6.7A TO-247AC is available from Makers Electronics. Compare the offers above to find the best price.

What gate voltage do I need to drive it?

The on-resistance is specified at a gate-source voltage of 10V, so drive the gate at around 10V for full switching performance. Do not exceed the maximum gate-source rating of ±20V. This is not a logic-level MOSFET, so a 3.3V or 5V microcontroller pin cannot fully turn it on directly.

Does it need a heatsink?

At higher currents or switching losses the MOSFET will heat up, so a heatsink is recommended. The metal tab of a TO-247 package is connected to the drain, so use an insulating washer and thermal compound if mounting it on a grounded heatsink.