ElectronicsEgypt
IRF250 N-Channel Power MOSFET (200V, 30A, TO-3)

IRF250 N-Channel Power MOSFET (200V, 30A, TO-3)

Part number: IRF250Brand: International RectifierTransistors & MOSFETs

Lowest price now

45 EGP

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Prices updated: 13 Oct 2026

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Price history

Lowest daily price, last 90 days

45.684544.3312 Oct 202613 Oct 2026

Lowest price recorded: 45 EGP

About this product

The IRF250 is an N-channel power MOSFET in a metal TO-3 package, rated for 200 V drain-source and 30 A continuous drain current. It is intended for high-power switching such as amplifiers, power supplies and heavy motor loads, where the metal case is mounted on a heatsink.

Specifications

Polarity
N-channel
Drain-source voltage (VDSS)
200 V
Continuous drain current (ID)
30 A
RDS(on) max
0.085 Ω at VGS = 10 V
Package
TO-3 (metal case)

Frequently asked questions

What is the price of IRF250 N-Channel Power MOSFET (200V, 30A, TO-3) in Egypt?

IRF250 N-Channel Power MOSFET (200V, 30A, TO-3) currently costs 45 EGP in Egypt.

Where can I buy IRF250 N-Channel Power MOSFET (200V, 30A, TO-3) in Egypt?

IRF250 N-Channel Power MOSFET (200V, 30A, TO-3) is available from Future Electronics. Compare the offers above to find the best price.

What are the pin connections of the IRF250 in TO-3?

The TO-3 case is the Drain, and the two leads are Gate and Source. The metal case is electrically connected to the drain, so use an insulating washer and isolation kit if it is mounted on a grounded heatsink.

Does the IRF250 need a heatsink?

Yes, for any significant current the TO-3 case should be bolted to a heatsink, because power dissipation at high current generates a lot of heat. Use thermal compound between the case and the heatsink.