ElectronicsEgypt
G60N60UFD Power IGBT Transistor 600V 60A

G60N60UFD Power IGBT Transistor 600V 60A

Part number: G60N60UFDTransistors & MOSFETs

Lowest price now

90 EGP

1 offer · 1 stores

View in store: Microohm

Prices updated: 13 Oct 2026

Compare prices

StorePriceView in store
Microohm logoMicroohm90 EGP120View in store

Price history

Lowest daily price, last 90 days

91.359088.6512 Oct 202613 Oct 2026

Lowest price recorded: 90 EGP

About this product

A power IGBT rated for 600 V and 60 A, used to switch higher-power loads in circuits such as inverters and motor drives. IGBTs combine a voltage-driven gate with high current capability, so they need a suitable gate driver circuit. Check the datasheet for package, pinout and switching limits before use.

Specifications

Device type
Power IGBT
Collector-emitter voltage
600 V
Collector current
60 A

Frequently asked questions

What is the price of G60N60UFD Power IGBT Transistor 600V 60A in Egypt?

G60N60UFD Power IGBT Transistor 600V 60A currently costs 90 EGP in Egypt.

Where can I buy G60N60UFD Power IGBT Transistor 600V 60A in Egypt?

G60N60UFD Power IGBT Transistor 600V 60A is available from Microohm. Compare the offers above to find the best price.

What gate drive does it need?

IGBTs are voltage-driven, so use a gate driver circuit that follows the gate voltage and gate resistor recommendations in the datasheet.

Can I replace a MOSFET with it in an existing circuit?

Not always. IGBTs and MOSFETs differ in gate behaviour and switching characteristics, so verify the circuit against the datasheet before substituting.