DG210N06 (210N06) N-Channel MOSFET 60V 210A TO-247
Prices updated: 13 Oct 2026
Compare prices
| Store | product | Price | View in store |
|---|---|---|---|
 Microohm | DG210N06 210N06 TO-247 210A 60V N-CHANNEL MOSFET | 100 EGP140 | View in store |
Price history
Lowest daily price, last 90 days
Lowest price recorded: 100 EGP
About this product
DG210N06 (210N06) is a 60 V N-channel power MOSFET in the TO-247 package. The listing gives a continuous drain current of 130 to 210 A and a maximum power dissipation of 110 to 220 W. It is intended for high-current switching in power converters and motor-drive circuits.
Specifications
- Transistor type
- N-Channel MOSFET
- Drain-source voltage (Vds)
- 60 V
- Gate-source voltage (Vgs)
- ±25 V
- Continuous drain current (Id)
- 130 to 210 A
- Avalanche current
- 40 A
- Avalanche energy
- 800 mJ
- Maximum power dissipation
- 110 to 220 W
- Junction and storage temperature
- -55 to 175 °C
- Package
- TO-247
Frequently asked questions
What is the price of DG210N06 (210N06) N-Channel MOSFET 60V 210A TO-247 in Egypt?
DG210N06 (210N06) N-Channel MOSFET 60V 210A TO-247 currently costs 100 EGP in Egypt.
Where can I buy DG210N06 (210N06) N-Channel MOSFET 60V 210A TO-247 in Egypt?
DG210N06 (210N06) N-Channel MOSFET 60V 210A TO-247 is available from Microohm. Compare the offers above to find the best price.
Does this MOSFET need a heatsink?
Yes for most high-current use. The listing gives a power dissipation of 110 to 220 W, so mount it on an adequately sized heatsink with thermal compound and verify the thermal design against the datasheet.
What gate drive voltage should I use?
The maximum gate-source voltage is ±25 V. Use a gate driver whose output stays within this limit, and add a gate resistor to control switching speed and ringing.
