6R190C6 TO-220 N-Channel Power MOSFET 650V 20A
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Prices updated: 13 Oct 2026
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About this product
CoolMOS high-voltage N-channel power MOSFET from Infineon in a TO-220 package, built on the super junction principle. It targets switch-mode power supplies, PFC stages, PWM stages and lighting, with low switching losses, high commutation ruggedness and easy drive.
Specifications
- Channel type
- N-channel
- Drain-source voltage (VDS)
- 650 V
- Continuous drain current (ID)
- 20 A
- On-resistance (RDS(on))
- 0.19 Ω
- Package
- TO-220
- Technology
- CoolMOS (super junction)
Frequently asked questions
Does it need a gate driver?
For reliable switching, drive the gate through a suitable driver and gate resistor, and keep the gate-source voltage within the datasheet maximum. Check the datasheet for the recommended gate drive voltage and switching guidance.
Is it suitable for 230 V mains circuits?
Its 650 V rating suits rectified mains stages such as PFC and flyback SMPS circuits, which see roughly 310 to 325 V DC from 220 to 230 V AC, with margin for voltage spikes. Mains circuits are hazardous; use proper isolation and enclosure.
