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2SK538 N-Channel MOSFET 900V 3A 100W TO-3P

2SK538 N-Channel MOSFET 900V 3A 100W TO-3P

Part number: 2SK538Transistors & MOSFETs

Lowest price now

25 EGP

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View in store: Makers Electronics

Prices updated: 13 Oct 2026

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Price history

Lowest daily price, last 90 days

25.382524.6312 Oct 202613 Oct 2026

Lowest price recorded: 25 EGP

About this product

The 2SK538 is a high-voltage N-channel MOSFET rated for 900 V drain-source voltage and 3 A drain current, with 100 W maximum power dissipation in a TO-3P package. Its maximum on-resistance is 4.5 Ω, suiting it to high-voltage switching circuits.

Specifications

Channel type
N-Channel
Drain-source voltage (Vds)
900 V
Drain current (Id)
3 A
Maximum power dissipation (Pd)
100 W
Gate-source voltage (Vgs, max)
20 V
Maximum junction temperature (Tj)
150 °C
Maximum on-resistance (Rds(on))
4.5 Ω
Package
TO-3P

Frequently asked questions

What is the price of 2SK538 N-Channel MOSFET 900V 3A 100W TO-3P in Egypt?

2SK538 N-Channel MOSFET 900V 3A 100W TO-3P currently costs 25 EGP in Egypt.

Where can I buy 2SK538 N-Channel MOSFET 900V 3A 100W TO-3P in Egypt?

2SK538 N-Channel MOSFET 900V 3A 100W TO-3P is available from Makers Electronics. Compare the offers above to find the best price.

How should I drive the 2SK538 gate safely?

The gate-source voltage is rated at a maximum of 20 V, so keep the drive within that limit. Use a gate resistor to limit switching current, and check the datasheet for recommended drive levels.

Does the 2SK538 need a heatsink?

With up to 100 W dissipation, a heatsink is needed for sustained operation. Check the datasheet for pin assignment and whether the metal tab must be electrically isolated from the heatsink.