
2SK538 N-Channel MOSFET 900V 3A 100W TO-3P
Prices updated: 13 Oct 2026
Compare prices
| Store | product | Price | View in store |
|---|---|---|---|
Makers Electronics | 2SK538 N-Channel MOSFET Transistor 900V 3A 100W TO-3P | 25 EGP | View in store |
Price history
Lowest daily price, last 90 days
Lowest price recorded: 25 EGP
About this product
The 2SK538 is a high-voltage N-channel MOSFET rated for 900 V drain-source voltage and 3 A drain current, with 100 W maximum power dissipation in a TO-3P package. Its maximum on-resistance is 4.5 Ω, suiting it to high-voltage switching circuits.
Specifications
- Channel type
- N-Channel
- Drain-source voltage (Vds)
- 900 V
- Drain current (Id)
- 3 A
- Maximum power dissipation (Pd)
- 100 W
- Gate-source voltage (Vgs, max)
- 20 V
- Maximum junction temperature (Tj)
- 150 °C
- Maximum on-resistance (Rds(on))
- 4.5 Ω
- Package
- TO-3P
Frequently asked questions
What is the price of 2SK538 N-Channel MOSFET 900V 3A 100W TO-3P in Egypt?
2SK538 N-Channel MOSFET 900V 3A 100W TO-3P currently costs 25 EGP in Egypt.
Where can I buy 2SK538 N-Channel MOSFET 900V 3A 100W TO-3P in Egypt?
2SK538 N-Channel MOSFET 900V 3A 100W TO-3P is available from Makers Electronics. Compare the offers above to find the best price.
How should I drive the 2SK538 gate safely?
The gate-source voltage is rated at a maximum of 20 V, so keep the drive within that limit. Use a gate resistor to limit switching current, and check the datasheet for recommended drive levels.
Does the 2SK538 need a heatsink?
With up to 100 W dissipation, a heatsink is needed for sustained operation. Check the datasheet for pin assignment and whether the metal tab must be electrically isolated from the heatsink.






